DocumentCode :
2346502
Title :
A wideband low-phase-noise CMOS VCO
Author :
Berny, A.D. ; Niknejad, Ali M. ; Meyer, Robert G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear :
2003
fDate :
21-24 Sept. 2003
Firstpage :
555
Lastpage :
558
Abstract :
A CMOS VCO has been designed and fabricated in a commercial 0.25 μm CMOS process. Using a combination of switched binary-weighted capacitors and standard varactors, this VCO achieves a 28% tuning range with a control voltage ranging from 0-2 V, while maintaining a tuning sensitivity of less than 75 MHz/V over its entire frequency range. Compact choke inductors are used in place of resistors to provide a low noise bias point to the varactors. The choke inductors achieve more than 90 nH of effective inductance while consuming a die area of only 92×92 μm2. The measured single-sided phase noise is -127 dBc/Hz at a 600 kHz offset from a 1.24 GHz carrier when the VCO core is drawing 3.6 mA from a 2 V supply.
Keywords :
CMOS analogue integrated circuits; UHF oscillators; inductors; integrated circuit noise; phase noise; switched capacitor networks; varactors; 0 to 2 V; 0.25 micron; 1.24 GHz; 2 V; 3.6 mA; 92 micron; VCO control voltage range; VCO tuning range; choke inductors; low-phase-noise CMOS VCO; switched binary-weighted capacitors; varactor biasing; wideband VCO; CMOS process; Capacitors; Frequency; Inductors; Resistors; Tuning; Varactors; Voltage control; Voltage-controlled oscillators; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
Type :
conf
DOI :
10.1109/CICC.2003.1249459
Filename :
1249459
Link To Document :
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