Strain overcompensated GaInP/AlGaInP quantum well laser structures for improved reliability at high output powers

Author

Valster, A. ; Meney, A.T. ; Downes, J.R. ; Adams, A.R. ; Brouwer, A.A. ; Corbijn, A.J.

Author_Institution

Philips Optoelectron. Centre, Eindhoven, Netherlands

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

139

Lastpage

140

Abstract

Strain overcompensated multiple quantum well laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage which normally takes place at the facets due to compressive strain relaxation. This results in a lower temperature rise of the lasing spot leading to a remarkable improvement of the reliability of high power laser diodes.

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; laser reliability; optical fabrication; quantum well lasers; semiconductor device reliability; vapour phase epitaxial growth; GaInP-AlGaInP; GaInP/AlGaInP; bandgap shrinkage; compressive strain relaxation; facets; high output powers; high power laser diodes; lasing spot; quantum well laser structures; reliability; strain overcompensated quantum well lasers; strain overcompensation; temperature rise; Aging; Capacitive sensors; Coatings; Diode lasers; Electrons; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.558765

Filename

558765