DocumentCode
2346599
Title
Reliability of 680-nm window laser diodes at 50-100 mW CW operation
Author
Shima, A. ; Tada, H. ; Utakouji, T. ; Motoda, T. ; Tsugami, M. ; Higuchi, H. ; Aiga, M.
Author_Institution
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
141
Lastpage
142
Abstract
By reduction of the operating current density due to a long cavity length of 900 /spl mu/m, reliable 5,000-hour operation of 680-nm window lasers has been realized under the conditions of 70 mW at 60/spl deg/C and 100 mW at 40/spl deg/C for the first time.
Keywords
III-V semiconductors; current density; gallium compounds; indium compounds; laser cavity resonators; laser reliability; quantum well lasers; semiconductor device reliability; 100 mW; 40 C; 50 to 100 mW; 5000 h; 60 C; 680 nm; 70 mW; 900 mum; CW operation; GaInP; current density; double quantum well lasers; laser diodes; long cavity length; reliability; Aging; Current density; Degradation; Diode lasers; Electrons; Testing; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.558766
Filename
558766
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