DocumentCode
2346767
Title
Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors
Author
Tanabe, Masamichi ; Shimamoto, Hiromi ; Onai, Takahiro ; Washio, Katsuyoshi
Author_Institution
Hitachi Device Eng. Co. Ltd., Kokobunji, Japan
fYear
1995
fDate
22-25 Mar 1995
Firstpage
121
Lastpage
125
Abstract
A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant one. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter
Keywords
bipolar transistors; semiconductor device models; semiconductor device testing; silicon; Si; parasitic base resistance; self-aligned polysilicon base electrode bipolar transistors; simplified distribution model; test structure; Automatic testing; Bipolar transistors; Circuit testing; Conductivity; Electrodes; Equivalent circuits; Frequency; Laboratories; Noise figure; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location
Nara
Print_ISBN
0-7803-2065-4
Type
conf
DOI
10.1109/ICMTS.1995.513958
Filename
513958
Link To Document