DocumentCode
2346794
Title
Modified transmission line pulse system and transistor test structures for the study of ESD
Author
Ashton, Robert A.
Author_Institution
AT&T Bell Labs., Orlando, FL, USA
fYear
1995
fDate
22-25 Mar 1995
Firstpage
127
Lastpage
132
Abstract
A modified Transmission Line Pulsing System for characterizing transistors under high currents for ESD performance prediction and understanding is presented which can both stress devices and measure damage. Guidelines for transistor test structure design for use with the system are presented and demonstrated for PMOS transistors
Keywords
MOSFET; electrostatic discharge; semiconductor device testing; transmission lines; ESD; PMOS transistors; damage; device stress; transistor test structures; transmission line pulse system; Circuit testing; Electrostatic discharge; Power transmission lines; Probes; Pulse measurements; Stress; System testing; Transmission line measurements; Transmission lines; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location
Nara
Print_ISBN
0-7803-2065-4
Type
conf
DOI
10.1109/ICMTS.1995.513959
Filename
513959
Link To Document