Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells

Author

Hangleiter, A. ; Frankowsky, G. ; Härle, V. ; Steuber, F. ; Scholz, F.

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

151

Lastpage

152

Abstract

We have studied the optical gain in nitride-based laser structures. We find evidence for excitonic gain at room temperature. A strong polarization dependence of the gain is observed, in accordance with the band structure. We have used optical gain spectroscopy employing the stripe excitation method in order to elucidate the mechanisms of optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells.

Keywords

III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; light polarisation; quantum well lasers; visible spectra; GaInN-GaN; GaN-AlGaN; GaN-AlGaN double heterostructures; band structure; excitonic gain; nitride-based laser structures; optical gain; optical gain spectroscopy; quantum wells; room temperature; room-temperature optical gain; stripe excitation method; strong polarization dependence; Aluminum gallium nitride; DH-HEMTs; Excitons; Fluctuations; Gallium nitride; Optical arrays; Optical polarization; Optical pumping; Optical scattering; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.558773

Filename

558773