Title :
A new test structure to study electromigration at grain boundaries using the single-crystal aluminum interconnection
Author :
Kusuyama, Koichi ; Nakajima, Yasushi ; Murakami, Yoshinori
Author_Institution :
Res. Center, Nissan Motor Co. Ltd., Kanagawa, Japan
Abstract :
The new test structure with single-crystal aluminum interconnection made by the lateral-epitaxial growth method, was designed to study electromigration (EM) at grain boundaries in bamboo structure. Having only two bamboo grain boundaries, the EM mechanism can be analyzed more accurately by this new structure than using the ordinary structure of series of grain boundaries
Keywords :
ULSI; aluminium; electromigration; grain boundary diffusion; integrated circuit metallisation; solid phase epitaxial growth; Al; EM mechanism; ULSI; bamboo structure; electromigration; grain boundaries; lateral-epitaxial growth method; solid phase epitaxial growth; submicrometre Al interconnection; Aluminum; Electromigration; Electron beams; Grain boundaries; Integrated circuit interconnections; Scanning electron microscopy; Substrates; Testing; Transmission electron microscopy; Ultra large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513977
