Title :
Wafer-level electromigration tests on NIST and SWEAT structures
Author :
Giroux, F. ; Gounelle, C. ; Mortini, P. ; Ghibaudo, G.
Author_Institution :
Central R&D, SGS-Thomson Microelectron., Crolles, France
Abstract :
Wafer-level electromigration tests are carried out on NIST and SWEAT structures. Four different process splits are tested. For 300°C maximum line temperature both structures allow detection of the differences in the process. On the other hand, for high maximum temperature no difference in process is observed by the electromigration tests. On the basis of these results, advantages and drawbacks of SWEAT and NIST structures are discussed
Keywords :
electromigration; integrated circuit interconnections; integrated circuit testing; 300 C; NIST; SWEAT; line temperature; wafer-level electromigration tests; Circuit testing; Current density; Electromigration; Equations; Life estimation; Life testing; NIST; Temperature control; Temperature distribution; Temperature sensors;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513978
