Wafer-level electromigration tests on NIST and SWEAT structures

Author

Giroux, F. ; Gounelle, C. ; Mortini, P. ; Ghibaudo, G.

Author_Institution

Central R&D, SGS-Thomson Microelectron., Crolles, France

fYear

1995

fDate

22-25 Mar 1995

Firstpage

229

Lastpage

232

Abstract

Wafer-level electromigration tests are carried out on NIST and SWEAT structures. Four different process splits are tested. For 300°C maximum line temperature both structures allow detection of the differences in the process. On the other hand, for high maximum temperature no difference in process is observed by the electromigration tests. On the basis of these results, advantages and drawbacks of SWEAT and NIST structures are discussed

Keywords

electromigration; integrated circuit interconnections; integrated circuit testing; 300 C; NIST; SWEAT; line temperature; wafer-level electromigration tests; Circuit testing; Current density; Electromigration; Equations; Life estimation; Life testing; NIST; Temperature control; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Conference_Location

Nara

Print_ISBN

0-7803-2065-4

Type

conf

DOI

10.1109/ICMTS.1995.513978

Filename

513978

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2347132