Title :
Diffusion barriers on titanium-based ohmic contact structures on SiC
Author :
Wenzel, Roland ; Goesmann, Fred ; Schmid-Fetzer, Rainer
Author_Institution :
Electron. Mat, Clausthal Tech. Univ., Germany
Abstract :
Silicon carbide is a very promising semiconductor material for high temperature applications and it can also be expected to become the material of choice for power semiconductor devices. One of the requirements for a working semiconductor device is the availability of a low resistance and thermally stable ohmic contact. Contact systems on n-6H-SiC using titanium-based contact materials (Ti3SiC2 , TiSi2, TiC), diffusion barriers (Pd, Ti, TiC, TiCN, W) and top metallizations (Al, Au, Pd) were investigated. Best results were obtained using the SiC-Ti3SiC2-Pd-Au contact layer structure, which is morphologically and electrically stable for up to 90 hours at 600°C and exhibits good ohmic behaviour
Keywords :
chemical interdiffusion; diffusion barriers; high-temperature electronics; ohmic contacts; power semiconductor devices; semiconductor device metallisation; semiconductor-metal boundaries; silicon compounds; thermal stability; titanium compounds; 600 C; 90 hr; Al; Al top metallization; Au top metallization; Au-Pd-Ti3SiC2-SiC; Au-Ti-Ti3SiC2-SiC; Au-TiC-Ti3SiC2-SiC; Au-TiCN-Ti3SiC2-SiC; Au-W-Ti3SiC2-SiC; Pd; Pd diffusion barriers; Pd top metallization; SiC; SiC substrates; SiC-Ti3SiC2-Pd-Au contact layer structure; Ti diffusion barriers; Ti3SiC2 contacts; TiC contacts; TiC diffusion barriers; TiC-SiC; TiCN diffusion barriers; TiSi2 contacts; TiSi2-SiC; W diffusion barriers; contact systems; diffusion barriers; electrical stability; high temperature applications; morphological stability; n-6H-SiC surface; ohmic behaviour; ohmic contact resistance; power semiconductor devices; silicon carbide semiconductor material; thermally stable ohmic contact; titanium-based contact materials; titanium-based ohmic contact structures; Contact resistance; Inorganic materials; Metallization; Ohmic contacts; Power semiconductor devices; Semiconductor devices; Semiconductor materials; Silicon carbide; Temperature; Thermal resistance;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730692
