Diamond based metal-semiconductor contacts for elevated temperatures

Author

Fecht, H.J. ; Ettl, C. ; Werner, M.

Author_Institution

Dept. of Mat., Ulm Univ., Germany

fYear

1998

fDate

22-27 Feb 1998

Firstpage

165

Lastpage

170

Abstract

Microsystems technology allows the integration of several functions within one product. The tendency towards continous miniaturization and the corresponding increase in integration density is a further challenge to the materials in use, in particular at elevated temperatures. For high temperature applications, wide bandgap semiconductors, such as diamond, are used. Several materials related properties are discussed, in particular for the manufacture of stable contacts

Keywords

diamond; electrical contacts; elemental semiconductors; high-temperature electronics; micromechanical devices; semiconductor device metallisation; semiconductor-metal boundaries; thermal stability; wide band gap semiconductors; C; diamond; diamond based metal-semiconductor contacts; elevated temperature contact applications; high temperature applications; integration density; materials properties; microsystems technology; miniaturization; multifunction integration; stable contacts; wide bandgap semiconductors; Charge carriers; Conductivity; Schottky barriers; Semiconductor device doping; Semiconductor materials; Temperature; Thermal resistance; Thermionic emission; Tunneling; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Temperature Electronic Materials, Devices and Sensors Conference, 1998

Conference_Location

San Diego, CA

Print_ISBN

0-7803-4437-5

Type

conf

DOI

10.1109/HTEMDS.1998.730693

Filename

730693