DocumentCode
2347165
Title
77 GHz planar Gunn VCOs on AlN substrates using novel flip-chip InP Gunn diodes
Author
Nakagawa, A. ; Watanabe, K. ; Yoshida, Takafumi ; Deguchi, T. ; Oki, Y.
Author_Institution
Res. Lab., New Japan Radio Co. Ltd., Saitama, Japan
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
1205
Abstract
A planar Gunn VCO on an AlN substrate has been developed for applications in 76-77 GHz automotive radar systems. It is fabricated using a novel flip-chip InP Gunn diode. A tuning range of 770 MHz at a center frequency of 76.45 GHz is obtained. An output power of the VCO is on average 42.7 mW and shows a variation of less than 0.15 dB.
Keywords
Gunn oscillators; III-V semiconductors; flip-chip devices; indium compounds; microwave integrated circuits; millimetre wave oscillators; road vehicle radar; voltage-controlled oscillators; 42.7 mW; 76 to 77 GHz; AlN; InP; automotive radar systems; flip-chip Gunn diode; output power; planar Gunn VCOs; tuning range; Anodes; Cathodes; Circuits; Gallium arsenide; Gunn devices; Indium phosphide; Millimeter wave radar; Millimeter wave technology; Semiconductor diodes; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863575
Filename
863575
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