Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate

An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5×10¹⁸ cm^-3 between 800°C and 1100°C, while that of Sb varied from 7×10¹⁹ cm^-3 at 800°C to 1.2×10²⁰ cm^-3 at 1100°C, both of which were higher than previously reported values