DocumentCode
2347295
Title
A combined CBR-MOS gate structure for mobility and channel width extraction
Author
Santander, Joaquin ; Lozano, Manuel ; Cané, Carles ; Tamayo, Emilio Lora
Author_Institution
Centro Nacional de Microelectronica, CSIC, Madrid, Spain
fYear
1995
fDate
22-25 Mar 1995
Firstpage
277
Lastpage
281
Abstract
A new test structure based on a Cross-Bridge-Resistor with the conducting layer made of the channel of a MOS transistor is presented. This structure has been fabricated in a CMOS technology, and the possibilities for extracting the carrier mobility and channel width without parasitic effects are analyzed
Keywords
MOSFET; carrier mobility; semiconductor device models; semiconductor device testing; CBR-MOS gate structure; CMOS technology; carrier mobility; channel width extraction; conducting layer; cross bridge resistor; device models; test structure; Arm; CMOS technology; Contacts; Current measurement; Electrical resistance measurement; MOSFETs; Resistors; Semiconductor device modeling; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location
Nara
Print_ISBN
0-7803-2065-4
Type
conf
DOI
10.1109/ICMTS.1995.513987
Filename
513987
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