Title :
Barrier strain influence on the high speed properties of compressively strained InGaAsP multi-quantum well laser structures
Author :
Bouchoule, S. ; Kazmierski, C. ; Mathoorasing, D. ; Ougazzaden, A. ; Marzin, J.-Y.
Author_Institution :
CNET, Bagneux, France
Abstract :
We report an extensive experimental study of barrier strain influence on high speed properties of compressively strained quaternary (InGaAsP) multi-quantum well DFB lasers emitting at 1.55 /spl mu/m. It is experimentally shown that a strong decrease of nonlinear gain coefficient can be obtained by reducing the barrier strain, leading to quantum well laser structures with damping coefficient as low as 0.18 ns, i.e. intrinsic bandwidth as high as 50 GHz. This result is explained by a substantial reduction of carrier capture time to escape time ratio, due to an increase of the well/barrier offset between the conduction and valence bands.
Keywords :
III-V semiconductors; conduction bands; damping; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; infrared sources; laser transitions; nonlinear optics; quantum well lasers; valence bands; 1.55 mum; InGaAsP; InGaAsP multi-quantum well laser structures; barrier strain; barrier strain influence; carrier capture time; compressively strained; conduction bands; damping coefficient; escape time ratio; high speed properties; intrinsic bandwidth; nonlinear gain coefficient; quaternary InGaAsP multi-quantum well DFB lasers; valence bands; well/barrier offset; Capacitive sensors; Charge carrier density; Charge carrier processes; Damping; Laser modes; Performance gain; Quantum well devices; Quantum well lasers; Strain control; Tensile strain;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558775
