DocumentCode
2347373
Title
Control of influence of Auger recombination on the threshold in asymmetric quantum-well lasers
Author
Kononenko, Valerii K. ; Ushakov, Dmitrii V. ; Sukhoivanov, Igor A. ; Mashoshina, Olga V.
Author_Institution
Stepanov Inst. of Phys., Minsk, Belarus
fYear
2004
fDate
6-9 Sept. 2004
Firstpage
107
Lastpage
111
Abstract
In the work, general description of the Auger recombination (AR) processes in quantum-well (QW) heterostructure is presented and new conception of weakening the temperature sensitivity of the threshold in asymmetric QW heterolasers is suggested. Numerical simulation is approved on an example of the GaInAs-GaInAsP laser system.
Keywords
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; Auger recombination; GaInAs-GaInAsP; GaInAs-GaInAsP laser; QW heterolasers; asymmetric quantum-well lasers; Diode lasers; Effective mass; Electron optics; Electronic mail; Optical control; Optical sensors; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004. 6th International Conference on
Print_ISBN
0-7803-8429-6
Type
conf
DOI
10.1109/LFNM.2004.1382436
Filename
1382436
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