Title :
High power picosecond pulse generation from a two-section InGaAsP-InP MQW complex-coupled DFB laser diode
Author :
Jiang, Ziping ; Tsang, H.K. ; Wang, Wei ; Wang, Zhijie ; Wang, Xiaojie ; Wang, Qiming
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
We show that high power picosecond pulses can be generated from a InGaAsP compressively strained two-section MQW laser diode by setting an optimal amplitude and time delay between the electrical pulses applied to each section of the device.
Keywords :
III-V semiconductors; Q-switching; delays; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical couplers; optimisation; quantum well lasers; InGaAsP compressively strained two-section MQW laser diode; InGaAsP-InP; electrical pulses; high power picosecond pulse generation; high power picosecond pulses; optimal amplitude; time delay; two-section InGaAsP-InP MQW complex-coupled DFB laser diode; Delay; Indium phosphide; Optical pulse generation; Optical pulses; Optical sensors; Power lasers; Pulse generation; Pulse measurements; Quantum well devices; Quantum well lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558778
