DocumentCode
2348005
Title
Emitter drive: a technique to drive a bipolar power transistor switching at 100 kHz
Author
Casaravilla, Gonzalo ; Silveira, Fernando
Author_Institution
Inst. de Ingenieria Electrica, Univ. de la Republica, Montevideo, Uruguay
fYear
1990
fDate
1990
Firstpage
188
Lastpage
192
Abstract
Theoretical support and experimental results concerning the application of an emitter driven bipolar power transistor to a 400 V 10 A power switch are presented. The central idea of the emitter drive is to turn off and on the bipolar transistor controlling the flow of the emitter current, using another switch. This switch was implemented with a low voltage power MOSFET. In this way it is possible to achieve a power switch with fairly high voltage rating, without excessive forward voltage drop (not achievable using power MOSFETS), and greater speed than by means of a bipolar transistor using the traditional base drive
Keywords
bipolar transistor circuits; driver circuits; power transistors; switching circuits; 10 A; 100 kHz; 400 V; LV power MOSFET; emitter current; emitter driven bipolar power transistor; power switch; voltage rating; Bipolar transistors; Breakdown voltage; Capacitance; Circuits; Current density; Low voltage; Power MOSFET; Power transistors; Resistors; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Colloquium in South America, 1990., Proceedings of the 1990 IEEE
Conference_Location
Argentina, Brazil, Chile
Print_ISBN
0-87942-610-1
Type
conf
DOI
10.1109/COLLOQ.1990.152828
Filename
152828
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