Title :
Emitter drive: a technique to drive a bipolar power transistor switching at 100 kHz
Author :
Casaravilla, Gonzalo ; Silveira, Fernando
Author_Institution :
Inst. de Ingenieria Electrica, Univ. de la Republica, Montevideo, Uruguay
Abstract :
Theoretical support and experimental results concerning the application of an emitter driven bipolar power transistor to a 400 V 10 A power switch are presented. The central idea of the emitter drive is to turn off and on the bipolar transistor controlling the flow of the emitter current, using another switch. This switch was implemented with a low voltage power MOSFET. In this way it is possible to achieve a power switch with fairly high voltage rating, without excessive forward voltage drop (not achievable using power MOSFETS), and greater speed than by means of a bipolar transistor using the traditional base drive
Keywords :
bipolar transistor circuits; driver circuits; power transistors; switching circuits; 10 A; 100 kHz; 400 V; LV power MOSFET; emitter current; emitter driven bipolar power transistor; power switch; voltage rating; Bipolar transistors; Breakdown voltage; Capacitance; Circuits; Current density; Low voltage; Power MOSFET; Power transistors; Resistors; Switches;
Conference_Titel :
Colloquium in South America, 1990., Proceedings of the 1990 IEEE
Conference_Location :
Argentina, Brazil, Chile
Print_ISBN :
0-87942-610-1
DOI :
10.1109/COLLOQ.1990.152828
