Transient gain-spectra and bandgap-renormalization dynamics in ultrashort optical pulse excited InGaAs-InGaAsP multi-quantum-well laser structure

Author

Wang, Jian ; Adler, Frank ; Schweizer, Heinz

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

161

Lastpage

162

Abstract

Time-development of transient optical net gain spectra of InGaAs-InGaAsP MQW laser structure after ultrashort pulse excitation was measured. With theoretical simulation, the dynamics of carrier density, carrier temperature and bandgap renormalization and their influences on transient gain were investigated.

Keywords

III-V semiconductors; carrier density; energy gap; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; quantum well lasers; time resolved spectra; transients; InGaAs-InGaAsP; InGaAs-InGaAsP MQW laser structure; InGaAs-InGaAsP multi-quantum-well laser structure; bandgap renormalization; bandgap-renormalization dynamics; carrier density; carrier temperature; theoretical simulation; transient gain; transient gain-spectra; transient optical net gain spectra; ultrashort optical pulse excitation; ultrashort pulse excitation; Charge carrier density; Gain measurement; Laser excitation; Optical pulses; Optical pumping; Pump lasers; Semiconductor lasers; Stimulated emission; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.558780

Filename

558780