Title :
6C-3 Field-Effect-Modulated SAW Devices on AlGaN/GaN Heterostructures
Author :
Pedros, J. ; Cuerdo, R. ; Calle, F. ; Grajal, J. ; Chacon, J. L Martinez ; Bougrioua, Z.
Author_Institution :
Inst. de Sistemas Optoelectronicos y Microtecnologia, Univ. Politecnica de Madrid
Abstract :
The field-effect modulation of transducer- and gate-biased surface acoustic wave (SAW) filters on AlGaN/GaN heterostructures is studied. The filter response is governed by the depletion of the two dimensional electron gas and the band diagram modulation induced by the bias voltages. The electromagnetic feedthrough between transducers depends on the particular polarization scheme. The modulation of different SAWs and pseudo-SAWs supported by the heterostructure is compared
Keywords :
III-V semiconductors; aluminium compounds; field effect devices; gallium compounds; surface acoustic wave filters; two-dimensional electron gas; ultrasonic transducers; wide band gap semiconductors; 2D electron gas; AlGaN-GaN; SAW filters; band diagram modulation; bias voltage; electromagnetic feedthrough; field-effect modulation; heterostructures; surface acoustic wave filters; transducers; Acoustic transducers; Acoustic waves; Aluminum gallium nitride; Electromagnetic wave polarization; Electrons; Filters; Gallium nitride; Surface acoustic wave devices; Surface acoustic waves; Voltage;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.78
