6C-3 Field-Effect-Modulated SAW Devices on AlGaN/GaN Heterostructures

Author

Pedros, J. ; Cuerdo, R. ; Calle, F. ; Grajal, J. ; Chacon, J. L Martinez ; Bougrioua, Z.

Author_Institution

Inst. de Sistemas Optoelectronicos y Microtecnologia, Univ. Politecnica de Madrid

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

273

Lastpage

276

Abstract

The field-effect modulation of transducer- and gate-biased surface acoustic wave (SAW) filters on AlGaN/GaN heterostructures is studied. The filter response is governed by the depletion of the two dimensional electron gas and the band diagram modulation induced by the bias voltages. The electromagnetic feedthrough between transducers depends on the particular polarization scheme. The modulation of different SAWs and pseudo-SAWs supported by the heterostructure is compared

Keywords

III-V semiconductors; aluminium compounds; field effect devices; gallium compounds; surface acoustic wave filters; two-dimensional electron gas; ultrasonic transducers; wide band gap semiconductors; 2D electron gas; AlGaN-GaN; SAW filters; band diagram modulation; bias voltage; electromagnetic feedthrough; field-effect modulation; heterostructures; surface acoustic wave filters; transducers; Acoustic transducers; Acoustic waves; Aluminum gallium nitride; Electromagnetic wave polarization; Electrons; Filters; Gallium nitride; Surface acoustic wave devices; Surface acoustic waves; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.78

Filename

4151934