DocumentCode :
2348476
Title :
Self-dependent equivalent circuit modeling of electrostatic comb transducers for integrated MEMS
Author :
Tsuchiya, Toshiyuki ; Tokusaki, Hiroyuki ; Hirai, Yoshikazu ; Sugano, Koji ; Tabata, Osamu
Author_Institution :
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
fYear :
2011
fDate :
3-5 Oct. 2011
Firstpage :
208
Lastpage :
213
Abstract :
The paper presents a new equivalent circuit model of electrostatic comb transducers for large-scale integration of MEMS into LSI. The model detects the displacement using a dummy spring to express the current induced by the movement, and the model parameters can be derived from only its dimensions not from external parameters (acting force, applied voltage). In addition, the model is composed from basic circuit components. Therefore it is easily utilized in conventional circuit simulation software. In-plane two-degree-of-freedom comb model was applied to basic SOI resonator and the measured and simulated electrical and mechanical properties showed good agreement in each other. A simple oscillating circuit with constant amplitude control has been tested and the transient responses showed good agreement as well.
Keywords :
circuit simulation; large scale integration; micromechanical devices; semiconductor device models; silicon-on-insulator; LSI; basic SOI resonator; basic circuit components; constant amplitude control; conventional circuit simulation software; electrostatic comb transducers; in-plane two-degree-of-freedom comb model; integrated MEMS; large-scale integration; mechanical properties; self-dependent equivalent circuit modeling; simple oscillating circuit; simulated electrical properties; Equivalent circuits; Frequency measurement; Integrated circuit modeling; Resonant frequency; Springs; Transducers; Voltage measurement; circuit simulation; electrostatic comb transducers; equivalent circuit; oscillation; resonator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI and System-on-Chip (VLSI-SoC), 2011 IEEE/IFIP 19th International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4577-0171-9
Electronic_ISBN :
978-1-4577-0169-6
Type :
conf
DOI :
10.1109/VLSISoC.2011.6081639
Filename :
6081639
Link To Document :
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