Title :
Numerical Simulation of Guardring-Free Planar InP/InGaAs Avalanche Photodiode
Author :
Malyshev, Sergei A. ; Chizh, Alexander L. ; Vasileuski, Yury G.
Author_Institution :
Nat. Acad. of Sci. of Belarus, Minsk
Abstract :
Theoretical analysis of guardring-free planar InP/InGaAs avalanche photodiode with additional decoupling p-charge sheet based on 2-D drift-diffusion simulation is presented. Design of such avalanche photodiode and conditions under which edge breakdown does not occur are discussed.
Keywords :
avalanche photodiodes; gallium arsenide; indium compounds; numerical analysis; 2-D drift-diffusion simulation; InP-InGaAs; decoupling p-charge sheet; guardring-free planar InP-InGaAs avalanche photodiode; numerical simulation; Avalanche breakdown; Avalanche photodiodes; Charge carrier processes; Computer simulation; Current density; Impact ionization; Indium gallium arsenide; Indium phosphide; Numerical simulation; Optical materials; avalanche breakdown; avalanche photodiodes; semiconductor device modeling;
Conference_Titel :
EUROCON, 2007. The International Conference on "Computer as a Tool"
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-0813-9
Electronic_ISBN :
978-1-4244-0813-9
DOI :
10.1109/EURCON.2007.4400334
