Title :
Temperature and field dependence of the RF surface resistance of high Tc materials
Author :
Moffat, D. ; Green, K. ; Kirchgessner, J. ; Padamsee, H. ; Rubin, D. ; Sears, J. ; Shu, Q.S.
Author_Institution :
Lab. of Nucl. Studies, Cornell Univ., Ithaca, NY, USA
Abstract :
The RF behavior of YBa2Cu3O7-x is being evaluated for its potential as a material used to make microwave cavities for particle accelerators. Single crystals and thin films are under study at 1.5 and 6 GHz. The best results have been obtained using the crystals of Schneemeyer et al. (1989), which show a residual resistance below 5×10-4 Ω at 6 GHz at 77 K. This is substantially below the resistance of 77 K copper. The resistance of these crystals at the superconducting transition drops more than two orders of magnitude within a few degrees of Tc. The sharpness of this drop is comparable to that of niobium. It is believed that these crystals are still far from ideal and that their properties deteriorate with time, but they are of much higher quality than the other forms of YBCO studied. Progress is being made towards producing thin films with useful RF properties. Compared with films of a year ago the sharpness of the superconducting transition has increased substantially although the residual losses are still high. The measurement techniques used are now sensitive to as little as 20 mm2 of material with a resistance of 20 μΩ
Keywords :
barium compounds; high-frequency effects; high-temperature superconductors; particle accelerators; superconducting thin films; surface conductivity; yttrium compounds; 1.5 GHz; 6 GHz; 77 K; RF surface resistance; YBa2Cu3O7-x; field dependence; high Tc materials; high temperature superconductors; microwave cavities; particle accelerators; residual losses; residual resistance; single crystals; superconducting transition; temperature dependence; thin films; Copper; Crystalline materials; Crystals; Linear particle accelerator; Niobium; Radio frequency; Superconducting microwave devices; Surface resistance; Temperature dependence; Transistors;
Conference_Titel :
Particle Accelerator Conference, 1989. Accelerator Science and Technology., Proceedings of the 1989 IEEE
Conference_Location :
Chicago, IL
DOI :
10.1109/PAC.1989.73088