DocumentCode
2349268
Title
Deep center defects in AlGaAs/GaAs grin-sch sqw lasers fabricated by MBE and MOCVD
Author
Liwu, Lu ; Jie, Zhou ; Songlin, Feng
Author_Institution
National Laboratory for Superlattices and Microstructures
fYear
1994
fDate
1994
Firstpage
22967
Lastpage
24063
Keywords
Electron traps; Epitaxial layers; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Semiconductor lasers; Spectroscopy; Substrates; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.863856
Filename
863856
Link To Document