• DocumentCode
    2349339
  • Title

    High dielectric constant Ta2O5 thin films prepared by rf magnetron sputtering for dynamic random access memory applications

  • Author

    Yeh, L.Y. ; Wang, J.J. ; Lee, J.Y.M. ; Hsu, J.Y. ; Lai, J.T. ; Chang, Y.S.

  • Author_Institution
    National Tsing-Hua University
  • fYear
    1994
  • fDate
    1994
  • Keywords
    DRAM chips; Dielectric constant; Dielectric measurements; Dielectric thin films; High-K gate dielectrics; Leakage current; MIM capacitors; Random access memory; Scanning electron microscopy; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.863879
  • Filename
    863879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349339