DocumentCode
2349431
Title
An analytical a-Si:H TFT DC/ capacitance model using an effective temperature approach for deriving a switching time model
Author
Chen, S.S. ; Kuo, J.B.
Author_Institution
National Taiwan University
fYear
1994
fDate
1994
Keywords
Amorphous materials; Amorphous silicon; Analytical models; Capacitance; Circuits; Inverters; Tail; Temperature; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.863885
Filename
863885
Link To Document