Title :
A statistical methodology developed to maximize the return on investment of process capability improvement
Author :
Hirschman, K.D. ; Fennelly, T.J., Jr.
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
A statistical methodology which can be used to maximize the return on investment of process capability improvement is presented. This method is an extension of Quality Engineering by Design (QED) techniques, and incorporates both process simulation techniques and product manufacturing data. The resulting combination provides process engineers and management in manufacturing environment with a useful weapon against variability. The focus is on reducing process variability in order to achieve device performance specifications. A case study is presented on the variation reduction of the nMOS threshold voltage (Vtn) in the RIT CMOS process. The end result is a plan which will determine where variation reduction efforts will be most rewarded, and possible strategies which can be used to achieve the required product quality
Keywords :
CMOS integrated circuits; design engineering; economics; integrated circuit manufacture; quality control; semiconductor process modelling; statistical analysis; QED; Quality Engineering by Design; RIT CMOS process; investment; nMOS threshold voltage; process capability; process simulation; product manufacturing; statistical methodology; variability; Data engineering; Design engineering; Engineering management; Environmental management; Investments; MOS devices; Manufacturing processes; Statistical analysis; Virtual manufacturing; Weapons;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514119