Title :
A closed-form physical model for vlsi bipolar devices considering energy transport
Author :
Huang, H.J. ; Kuo, J.B.
Author_Institution :
National Taiwan University
Keywords :
Analytical models; BiCMOS integrated circuits; CMOS technology; Current density; Doping profiles; Electrons; Lattices; Tail; Temperature; Very large scale integration;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.863891
