DocumentCode :
2349568
Title :
The influences of nitrogen, helium, hydrogen, or argon dilution on plasma-enhanced chemical vapor deposited a-SiNx:H
Author :
Chang, Chun-Yen ; Hsieh, Shou-Wei ; Lee, Yeong-Shyang ; Lin, Chiung-Wei
Author_Institution :
National Chiao Tung University
fYear :
1994
fDate :
1994
Keywords :
Argon; Chemicals; Gases; Helium; Hydrogen; Nitrogen; Plasma chemistry; Plasma temperature; Semiconductor films; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.863892
Filename :
863892
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2349568
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