• DocumentCode
    234957
  • Title

    Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

  • Author

    Tao Wang ; Smet, Vanessa ; Kobayashi, Masato ; Sundaram, Venky ; Raj, P. Markondeya ; Tummala, Rao

  • Author_Institution
    3D Syst. Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2014
  • fDate
    27-30 May 2014
  • Firstpage
    284
  • Lastpage
    289
  • Abstract
    This paper reports the first design and demonstration of a manufacturable 20 μm pitch Cu interconnection technology to ultra-thin glass interposers. Bonding is accomplished at temperatures below 200 °C without the need for solders. Manufacturability challenges such as substrate warpage, bump noncoplanarity and assembly throughput with low bonding times are addressed with this technology. The modeling and experimental results indicate that the ultra-fine pitch Cu interconnection offsets more than 3 μm non-coplanarity. Bonding interfaces were characterized to show that metallurgical bonding microstructure is formed even with a bonding time of 5 seconds, with superior electrical properties. A mechanism for low-temperature metallurgical bonding is proposed based on the characterization results.
  • Keywords
    bonding processes; copper; glass; integrated circuit interconnections; Cu; assembly throughput; bonding interfaces; bump noncoplanarity; electrical properties; low-temperature Cu interconnections; metallurgical bonding microstructure; substrate warpage; time 5 s; ultra-fine pitch Cu interconnection; ultra-thin glass interposers; Assembly; Bonding; Glass; Gold; Reliability; Stress; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
  • Conference_Location
    Orlando, FL
  • Type

    conf

  • DOI
    10.1109/ECTC.2014.6897300
  • Filename
    6897300