• DocumentCode
    2349587
  • Title

    Steep-subthreshold-slope devices on SOI

  • Author

    Liu, Tsu-Jae King ; Matheu, Peter ; Jacobson, Zachery ; Kim, Sung Hwan

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA, USA
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The use of an SOI substrate together with a small-band gap source material is advantageous for optimizing TFET manufacturability and performance.
  • Keywords
    MOSFET; energy gap; silicon-on-insulator; tunnel transistors; SOI substrate; TFET manufacturability; TFET performance; small-band gap source material; steep-subthreshold-slope devices; CMOS integrated circuits; Heterojunctions; Logic gates; Silicon; Substrates; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081702
  • Filename
    6081702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349587