DocumentCode
2349591
Title
Breakdown mechanisms and stress-induced leakage current in ultra-thin oxides and N2O oxynitrides
Author
Chou, Anthony I. ; Lai, Kafai ; Kumar, Gran ; Chowdhury, Prasenjit ; Hao, Ming-Yin ; Chen, Wei-Ming ; Gardner, Michael ; Fulford, J. ; Lee, Jack C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear
1995
fDate
16-17 May 1995
Firstpage
90
Lastpage
93
Abstract
In this paper, we investigate breakdown mechanisms and stress-induced leakage current (SILC) for conventional thermal oxides and N2O oxynitrides. The role of hole generation and trapping in the breakdown of both thermal oxides and oxynitrides is studied in samples with thicknesses ranging from 33-87 Å. SILC characteristics of these dielectrics thicknesses are scaled downwards; instead there is a “turnaround” near a thickness of 50 Å
Keywords
dielectric thin films; electric breakdown; hole traps; leakage currents; N2O; SiO2; SiON; breakdown; dielectrics; hole generation; hole trapping; oxynitrides; stress-induced leakage current; thermal oxides; ultra-thin films; Dielectric breakdown; Dielectric devices; Dielectric measurements; Dielectric substrates; Electric breakdown; Leakage current; Lifting equipment; Microelectronics; Thermal stresses; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location
Austin, TX
ISSN
0749-6877
Print_ISBN
0-7803-2596-6
Type
conf
DOI
10.1109/UGIM.1995.514122
Filename
514122
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