• DocumentCode
    2349599
  • Title

    Numerical analysis of intrinsic capacitances for a fully depleted SOI MOSFET

  • Author

    Yang, Ping-Chang ; Liu, Patrick S.

  • Author_Institution
    Feng Chia University
  • fYear
    1994
  • fDate
    1994
  • Keywords
    Art; Capacitance; Capacitors; Electrons; Equivalent circuits; MOSFET circuits; Numerical analysis; Numerical simulation; Silicon on insulator technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.863895
  • Filename
    863895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349599