Title :
Experimental observation of localized luminescence clamping in complex-coupled DFB laser diodes
Author :
Achtenhagen, M. ; Miles, R.O. ; Reinhart, F.K.
Author_Institution :
Zurich Res. Lab., IBM Res. Div., Ruschlikon, Switzerland
Abstract :
The longitudinal dependence of the standing wave in a complex-coupled DFB laser is experimentally investigated. We have observed localized clamping of the luminescence for unstable operation conditions such as multi-mode emission. We present measurements of the variation in luminescence as a function of position along the laser cavity length for various relative phases between facets and grating. We impose these conditions by systematically depositing layers of Ge to change the relative facet-to-grating distance in an InGaAsP MQW complex coupled DFB laser. A model based on standing-wave considerations is used to explain the experimental findings.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser stability; laser theory; laser variables measurement; optical couplers; photoluminescence; quantum well lasers; semiconductor device models; InGaAsP; InGaAsP MQW complex coupled DFB laser; complex-coupled DFB laser diodes; facet-to-grating distance; laser cavity length; localized luminescence clamping; longitudinal dependence; multi-mode emission; standing wave; standing-wave considerations; systematically depositing layers; unstable operation conditions; Clamps; Gratings; Laser modes; Laser transitions; Length measurement; Luminescence; Optical coupling; Phase measurement; Position measurement; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558793
