• DocumentCode
    2349646
  • Title

    Integration of gallium nitride and silicon: From devices to Diamond

  • Author

    Piner, Edwin L.

  • Author_Institution
    Texas State Univ., San Marcos, TX, USA
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    18
  • Abstract
    A collection of slides from the author´s conference presentation is given. The following topics are discussed: silicon as a substrate for GaN epitaxy; N-Polar GaN HEMT; and GaN/Diamond wafer process.
  • Keywords
    diamond; epitaxial growth; gallium compounds; high electron mobility transistors; silicon; substrates; N-polar HEMT; diamond; gallium nitride epitaxy; silicon; substrate; wafer process; Diamond-like carbon; Epitaxial growth; Gallium nitride; Indium gallium arsenide; Silicon; Silicon carbide; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081705
  • Filename
    6081705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349646