Title :
Improvement of radiation hardness of MOS device by use of amorphous Si
Author :
Chang-Liao, Kuei-Shu ; Chuang, Chi-Chih
Author_Institution :
National Tsing Hua University
Keywords :
Amorphous materials; Annealing; Compressive stress; Electrodes; Fabrication; Frequency; Hydrogen; MOS capacitors; MOS devices; Semiconductor films;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.863899
