• DocumentCode
    2349649
  • Title

    Improvement of radiation hardness of MOS device by use of amorphous Si

  • Author

    Chang-Liao, Kuei-Shu ; Chuang, Chi-Chih

  • Author_Institution
    National Tsing Hua University
  • fYear
    1994
  • fDate
    1994
  • Keywords
    Amorphous materials; Annealing; Compressive stress; Electrodes; Fabrication; Frequency; Hydrogen; MOS capacitors; MOS devices; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.863899
  • Filename
    863899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349649