Strain reduction in Silicon-on-Sapphire by wafer bonding

Author

Imthurn, G.P. ; Miscione, A.M. ; Landry, K. ; Vaufredaz, A. ; Barge, T. ; Lagahe-Blanchard, C.

Author_Institution

Peregrine Semicond. Corp., San Diego, CA, USA

fYear

2011

fDate

3-6 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

Though Silicon-on-Sapphire (SOS) has many applications for RF circuits, compressive strain in the hetero epitaxially deposited silicon film reduces the electron mobility and diminishes its high-frequency performance. To eliminate this strain, we bonded silicon films to sapphire. There has been limited work done on Bonded SOS (BSOS) up until this time. The current work has provided a mass-produced SOI technology that has device performance exceeding that of incumbent RF technologies. The BSOS films show 56% higher electron mobility than SOS and RF switch performance better than GaAs PHEMT´s.

Keywords

CMOS integrated circuits; electron mobility; elemental semiconductors; radiofrequency integrated circuits; semiconductor thin films; silicon; silicon-on-insulator; wafer bonding; BSOS films; CMOS process; GaAs PHEMT; RF circuits; Si; bonded SOS; compressive strain; electron mobility; heteroepitaxially deposited silicon film; mass-produced SOI technology; silicon-on-sapphire; strain reduction; wafer bonding; Films; Logic gates; Rough surfaces; Silicon; Strain; Stress; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2011 IEEE International

Conference_Location

Tempe, AZ

ISSN

1078-621X

Print_ISBN

978-1-61284-761-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2011.6081706

Filename

6081706