DocumentCode :
2349664
Title :
Improvement in radiation hardness of n-MOSFET´s with gate oxides prepared by multiple N2O annealings
Author :
Wu, You-Lin ; Kuo, Kang-Min ; Hwu, Jenn-Gwo
Author_Institution :
National Tailwan University
fYear :
1994
fDate :
1994
Keywords :
Capacitive sensors; Fabrication; MOSFET circuits; Nitrogen; Rapid thermal annealing; Semiconductor films; Silicon compounds; Thermal degradation; Thermal engineering; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.863900
Filename :
863900
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2349664
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