• DocumentCode
    2349671
  • Title

    The effect of implant dose rates and two step anneals on p+ -n ultra-shallow junctions

  • Author

    Sultan, A. ; Craig, M. ; Reddy, K. ; Banerjee, S. ; Ishida, E. ; Maillot, P. ; Larson, L.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    1995
  • fDate
    16-17 May 1995
  • Firstpage
    108
  • Lastpage
    112
  • Abstract
    Ultra-shallow junctions are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation in junction depth as a function of dose rate and two-step anneals is studied for doses of 1×1014 and 1×1015 cm-2 . B diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. Junction depth is further reduced for the two-step anneals as compared to the single-step RTA
  • Keywords
    annealing; boron compounds; diffusion; elemental semiconductors; ion implantation; p-n junctions; rapid thermal annealing; silicon; 5 keV; B diffusion; RTA; Si:BF2; crystalline Si; implant dose rate; p+-n ultra-shallow junctions; two step anneal; Amorphous materials; Crystallization; Current density; Hoses; Ion implantation; Microelectronic implants; Rapid thermal annealing; Tail; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
  • Conference_Location
    Austin, TX
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-2596-6
  • Type

    conf

  • DOI
    10.1109/UGIM.1995.514126
  • Filename
    514126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349671