SiGe MMICs for phased array radar applications

Author

Tayrani, R. ; Teshiba, M. ; Sakamoto, G. ; Chaudhry, Q. ; Alidio, R. ; Kang, Yue ; Ahmad, Ishtiaq ; Cisco, T. ; Hauhe, M.

Author_Institution

Raytheon Space & Airborne Syst., El Segundo, CA

fYear

2005

fDate

6-7 April 2005

Firstpage

38

Lastpage

38

Abstract

This paper reports the performances of several broadband monolithic SiGe MMICs suitable for phased array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe PIN diode offered by IBM 5-HP SiGe foundry process. Utilizing this diode, several control circuitries including a broadband (1-20 GHz) monolithic SPDT switch, a five port transfer switch, a 6-bit phase shifter, and a 5-bit attenuator, all operating over 7-11 GHz are designed. Also, the design and performance of a SiGe HBT variable gain cascode amplifier that combines the functionality of an amplifier and an attenuator into one MMIC is described

Keywords

MMIC amplifiers; MMIC phase shifters; attenuators; heterojunction bipolar transistors; integrated circuit design; microwave switches; p-i-n diodes; phased array radar; semiconductor materials; silicon compounds; 1 to 20 GHz; SiGe; SiGe HBT; SiGe PIN diode; amplitude designs; attenuator; broadband monolithic SiGe MMIC; phase control MMIC designs; phase shifter; phased array radar applications; transfer switch; variable gain cascode amplifier; Attenuators; Broadband amplifiers; Germanium silicon alloys; MMICs; Phase control; Phased arrays; Radar applications; Silicon germanium; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference

Conference_Location

Clearwater Beach, FL

Print_ISBN

0-7803-8861-5

Type

conf

DOI

10.1109/WAMIC.2005.1528375

Filename

1528375