DocumentCode :
2349688
Title :
A new methodology for fast development of multilevel metallization for ULSI technology
Author :
Islam Raja, M. ; El-Ghor, Mohamed ; Yin, David ; Pollack, Gordon
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
fYear :
1995
fDate :
16-17 May 1995
Firstpage :
113
Lastpage :
117
Abstract :
A methodology has been developed for fast process development and integration of multilevel metallization systems for ultra large scale integration technology. This methodology defines a set of primitive processes, which are then arranged in the required configuration to build or develop multilevel metallization systems. Each primitive process will have a predictive model and process control and calibration strategy including a set of test structures. This paper will describe how the methodology defined above has been applied to develop contacts and vias for multilevel metallization
Keywords :
ULSI; integrated circuit metallisation; semiconductor process modelling; ULSI technology; calibration; contacts; multilevel metallization; predictive model; process control; test structures; vias; Calibration; Costs; Etching; Government; Integrated circuit technology; Metallization; Physics; Predictive models; Process control; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
ISSN :
0749-6877
Print_ISBN :
0-7803-2596-6
Type :
conf
DOI :
10.1109/UGIM.1995.514127
Filename :
514127
Link To Document :
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