DocumentCode :
2349692
Title :
Memory Test Optimization for Parasitic Bit Line Coupling in SRAMs
Author :
Irobi, Sandra ; AL-Ars, Zaid ; Hamdioui, Said
Author_Institution :
CE Lab., Delft Univ. of Technol., Delft, Netherlands
fYear :
2011
fDate :
23-27 May 2011
Firstpage :
205
Lastpage :
205
Abstract :
Memory test optimization can significantly reduce test complexity, while retaining the quality of the test. In the presence of parasitic BL coupling, faults may only be detected by writing all possible coupling backgrounds (CBs) in the neighboring cells of the victim. However, using all possible CBs while testing for every fault consumes enormous test time, which can be significantly reduced, for the same fault coverage, if only limited required CBs are identified for each functional fault model (FFM). So far, no systematic approach has been proposed that identifies such limited required CBs, nor corresponding optimized memory tests generated that ap ply limited CBs. Therefore, this paper presents a systematic approach to identify such limited CBs, and thereafter presents an optimized test, March BLC, which detects all static memory faults in the presence of BL coupling using only required CBs.
Keywords :
SRAM chips; circuit complexity; circuit optimisation; integrated circuit testing; March BLC; SRAM; coupling background; functional fault model; memory test optimization; parasitic BL coupling; parasitic bit line coupling; static memory fault detection; test complexity reduction; test quality; Complexity theory; Couplings; Fault diagnosis; Memory management; Optimization; Stress; Systematics; Memory tests; Parasitic Bit Line coupling; SRAMs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ETS), 2011 16th IEEE European
Conference_Location :
Trondheim
ISSN :
1530-1877
Print_ISBN :
978-1-4577-0483-3
Electronic_ISBN :
1530-1877
Type :
conf
DOI :
10.1109/ETS.2011.11
Filename :
5957951
Link To Document :
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