DocumentCode :
2349701
Title :
Ellipsometry measurements on ultrathin silicon on insulator films
Author :
Grenouillet, L. ; Tiec, Y. Le ; Vu, Q.B. ; Vinet, M. ; LaRose, J.D. ; Kamineni, V.K. ; Posseme, N. ; Fullam, J. ; Doris, B.B. ; Diebold, A.C.
Author_Institution :
LETI, CEA, Albany, NY, USA
fYear :
2011
fDate :
3-6 Oct. 2011
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, silicon on insulator (SOI) thickness is evaluated on ultrathin silicon films using different fitting models. The reliability of the results is discussed.
Keywords :
ellipsometry; semiconductor device reliability; silicon-on-insulator; thickness measurement; ellipsometry measurements; reliability; silicon on insulator thickness; ultrathin silicon on insulator films; Dielectrics; Ellipsometry; Optical fibers; Potential well; Semiconductor device modeling; Silicon; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
ISSN :
1078-621X
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2011.6081709
Filename :
6081709
Link To Document :
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