• DocumentCode
    2349701
  • Title

    Ellipsometry measurements on ultrathin silicon on insulator films

  • Author

    Grenouillet, L. ; Tiec, Y. Le ; Vu, Q.B. ; Vinet, M. ; LaRose, J.D. ; Kamineni, V.K. ; Posseme, N. ; Fullam, J. ; Doris, B.B. ; Diebold, A.C.

  • Author_Institution
    LETI, CEA, Albany, NY, USA
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, silicon on insulator (SOI) thickness is evaluated on ultrathin silicon films using different fitting models. The reliability of the results is discussed.
  • Keywords
    ellipsometry; semiconductor device reliability; silicon-on-insulator; thickness measurement; ellipsometry measurements; reliability; silicon on insulator thickness; ultrathin silicon on insulator films; Dielectrics; Ellipsometry; Optical fibers; Potential well; Semiconductor device modeling; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081709
  • Filename
    6081709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349701