Title :
Characterization of a PVD-TiN as the diffusion barrier/adhesion promoter for use in a multilevel copper interconnection technology
Author :
Berti, Antonio ; Murarka, Shyam P.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
The use of copper, as the interconnection metal in a multilevel scheme, will require a diffusion barrier/adhesion promoter (DB/AP) layer between the metal and the dielectric. The use of TiN as a DB/AP layer in a first generation copper metallization scheme has thus been investigated. It is projected that this 0.25 μm technology will utilize 0.5 μm wide metal interconnections with aspect ratio of 1.0. Because using a 40 nm TiN cladding will only marginally increase the overall interconnection resistance, this barrier thickness was chosen as the default thickness for this study
Keywords :
adhesion; copper; diffusion barriers; integrated circuit interconnections; sputtered coatings; titanium compounds; 0.25 micron; Cu; PVD-TiN; TiN; adhesion promoter; diffusion barrier; metallization; multilevel copper interconnection technology; Adhesives; Annealing; Copper; Grain boundaries; Temperature; Testing; Thermal expansion; Thermal stresses; Tin; Titanium;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514128
