DocumentCode :
2349722
Title :
I-BIRAS: Interconnect Built-In Self-Repair and Adaptive Serialization in 3D Integrated Systems
Author :
Nicolaidis, Michael ; Pasca, Vladimir ; Anghel, Lorena
Author_Institution :
TIMA, UJF, Grenoble, France
fYear :
2011
fDate :
23-27 May 2011
Firstpage :
208
Lastpage :
208
Abstract :
In 3D integrated systems, Thru-Silicon-Vias (TSVs) enable higher performance and energy efficiency, by reducing the data travel distances. However, the TSV manufacturing and wear-out defect rates lead to poor interconnect reliability and yield. The high fault rates and TSV footprint make spare-based repair solutions inefficient. I-BIRAS combines self-repair and adaptive serialization to increase yield and circuit life at the cost of lower throughput. After the interconnect test, the diagnosis vector DV is used to perform the self-repair and adaptive serialization to increase yield and circuit life at the cost of lower throughput. After the interconnect test, the diagnosis vector DV is used to perform the self-repair and adaptive serialization. The design parameters are the number of data bits n, the number of spare TSVs r, and the minimum acceptable number mLIMIT of fault-free TSVs. If the number of fault-free TSVs is less than mLIMIT then the link assumed failed.
Keywords :
integrated circuit interconnections; three-dimensional integrated circuits; 3D integrated systems; I-BIRAS; adaptive serialization; interconnect built-in self-repair; thru-silicon-vias; Circuit faults; Integrated circuit interconnections; Loading; Radiation detectors; Strontium; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ETS), 2011 16th IEEE European
Conference_Location :
Trondheim
ISSN :
1530-1877
Print_ISBN :
978-1-4577-0483-3
Electronic_ISBN :
1530-1877
Type :
conf
DOI :
10.1109/ETS.2011.37
Filename :
5957954
Link To Document :
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