• DocumentCode
    2349722
  • Title

    I-BIRAS: Interconnect Built-In Self-Repair and Adaptive Serialization in 3D Integrated Systems

  • Author

    Nicolaidis, Michael ; Pasca, Vladimir ; Anghel, Lorena

  • Author_Institution
    TIMA, UJF, Grenoble, France
  • fYear
    2011
  • fDate
    23-27 May 2011
  • Firstpage
    208
  • Lastpage
    208
  • Abstract
    In 3D integrated systems, Thru-Silicon-Vias (TSVs) enable higher performance and energy efficiency, by reducing the data travel distances. However, the TSV manufacturing and wear-out defect rates lead to poor interconnect reliability and yield. The high fault rates and TSV footprint make spare-based repair solutions inefficient. I-BIRAS combines self-repair and adaptive serialization to increase yield and circuit life at the cost of lower throughput. After the interconnect test, the diagnosis vector DV is used to perform the self-repair and adaptive serialization to increase yield and circuit life at the cost of lower throughput. After the interconnect test, the diagnosis vector DV is used to perform the self-repair and adaptive serialization. The design parameters are the number of data bits n, the number of spare TSVs r, and the minimum acceptable number mLIMIT of fault-free TSVs. If the number of fault-free TSVs is less than mLIMIT then the link assumed failed.
  • Keywords
    integrated circuit interconnections; three-dimensional integrated circuits; 3D integrated systems; I-BIRAS; adaptive serialization; interconnect built-in self-repair; thru-silicon-vias; Circuit faults; Integrated circuit interconnections; Loading; Radiation detectors; Strontium; Three dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium (ETS), 2011 16th IEEE European
  • Conference_Location
    Trondheim
  • ISSN
    1530-1877
  • Print_ISBN
    978-1-4577-0483-3
  • Electronic_ISBN
    1530-1877
  • Type

    conf

  • DOI
    10.1109/ETS.2011.37
  • Filename
    5957954