• DocumentCode
    2349729
  • Title

    Benefits and challenges of FDSOI technology for 14nm node

  • Author

    Faynot, Olivier

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    21
  • Abstract
    Electrostatic, strain and power consumption will drive the scaling UTBOX helps the FDSOI scaling FDSOI scalability ensured down to LG~14nm Strain compatibility will be mandatory Both FinFET and FDSOI will merge towards nanowire type of devices.
  • Keywords
    MOSFET; SPICE; silicon-on-insulator; FDSOI scalability; FDSOI scaling; FDSOI technology; FinFET; electrostatic; nanowire; power consumption; scaling UTBOX; strain compatibility; Circuit synthesis; Conferences; Epitaxial growth; Integrated circuit modeling; Logic gates; Random access memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081710
  • Filename
    6081710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349729