ESD induced damage and hot-carrier reliability of NMOS and PMOS transistors

The Hot-Carrier Induced (HCI) degradation and the Electro-Static Discharge (ESD) induced damage are characterized for evaluating the reliability of both submicron LDD NMOS and PMOS transistors. These two types of transistors show different reliability behaviors in terms of the maximum HCI degradation conditions, the DC lifetimes, the snapback voltage characteristics, and ESD failure threshold voltages. Some observations are also described as unique features in the geometric effects both for HCI degradations in short channel/narrow width regimes and for ESD failure thresholds in the Machine Model (MM) ESD device characterization