• DocumentCode
    2349810
  • Title

    ESD protection in finfet technologies

  • Author

    Thijs, Steven

  • Author_Institution
    IMEC ESDTEAM, Belgium
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    33
  • Abstract
    Strong dependency on - process technology (SOIFF, bulkFF) - process options (strain, SEG,...) - layout parameters (LG, Wfin,...) ESD needs to be considered early during technology development ESD remains very challenging but ESD is no roadblock for the introduction of both SOIFF and bulkFF!
  • Keywords
    MOSFET; electrostatic discharge; ESD protection; FINFET technologies; layout parameters; process options; process technology; technology development; Electrostatic discharge; FinFETs; Integrated circuits; Logic gates; Reliability; Surge protection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081715
  • Filename
    6081715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349810