DocumentCode :
2349810
Title :
ESD protection in finfet technologies
Author :
Thijs, Steven
Author_Institution :
IMEC ESDTEAM, Belgium
fYear :
2011
fDate :
3-6 Oct. 2011
Firstpage :
1
Lastpage :
33
Abstract :
Strong dependency on - process technology (SOIFF, bulkFF) - process options (strain, SEG,...) - layout parameters (LG, Wfin,...) ESD needs to be considered early during technology development ESD remains very challenging but ESD is no roadblock for the introduction of both SOIFF and bulkFF!
Keywords :
MOSFET; electrostatic discharge; ESD protection; FINFET technologies; layout parameters; process options; process technology; technology development; Electrostatic discharge; FinFETs; Integrated circuits; Logic gates; Reliability; Surge protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
ISSN :
1078-621X
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2011.6081715
Filename :
6081715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2349810
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