Title :
4F-2 AlN Tuning Fork Type Resonators used with MEMS Technologies
Author :
Isobe, A. ; Asai, K. ; Matsumoto, H. ; Shibagaki, N.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji-shi
Abstract :
In this paper, we discuss miniature low-frequency resonators fabricated on Si chips using the technologies of tuning-fork-type and MEMS resonators. First, we theoretically analyzed the electrical responses and optimized the resonators´ structures by using a finite element method. We found that a tuning-fork-type resonator using an aluminum nitride piezoelectric film showed strong resonance and miniaturized features because of the strong piezoelectric properties. Finally, we fabricated a small tuning-fork-type resonator on a Si wafer with MEMS technology. The fork length was 200 mum, and the aluminum nitride thickness was 2 mum. The resonator showed low-frequency resonance at 1.8 MHz with a high Q value of 1074 and an excellent capacitance ratio of 229 in air, which is suitable for timers of microprocessor ICs
Keywords :
acoustic resonators; aluminium compounds; crystal resonators; finite element analysis; micromechanical resonators; 1.8 MHz; 2 micron; 200 micron; AlN; MEMS resonators; MEMS technology; aluminum nitride piezoelectric film; finite element method; microelectromechanical systems; piezoelectricity; tuning fork type resonators; Electrodes; Micromechanical devices; Microprocessors; Piezoelectric films; Resonance; Resonant frequency; Semiconductor films; Shape; Substrates; Vibrations;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.148
