• DocumentCode
    2349894
  • Title

    Simulation of electron transport in strained silicon on relaxed Si 1-xGex substrates

  • Author

    Rashed, M. ; Jailepalli, S. ; Zaman, R. ; Shih, W. ; Kwan, T.J.T. ; Maziar, C.M.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    1995
  • fDate
    16-17 May 1995
  • Firstpage
    168
  • Lastpage
    171
  • Abstract
    The physics of electron transport in pseudomorphically grown Si on relaxed (001) Si1-xGex is explored using an efficient fitted-band Monte Carlo (MC) simulator. The MC simulator is based on a multiband analytical model representing the features of a realistic energy bandstructure. The scattering rates are calculated using a nonlocal pseudopotential bandstructure. The scattering mechanisms included here are: acoustic-phonon scattering, optical phonon scattering, ionized impurity scattering, and carrier-carrier scattering. The impact ionization rate is calculated using an anisotropic energy threshold model. The investigation includes the study of and high field electron transport characteristics at 77 K and 300 K. The mobility enhancement in strained-Si is attributed to both the suppression of intervalley scattering and the lower effective mass transport (due to the lifting of six fold degeneracy of the conduction band minima of silicon). Agreement between calculated and experimental low field mobility has also been shown
  • Keywords
    Ge-Si alloys; Monte Carlo methods; carrier mobility; effective mass; elemental semiconductors; impact ionisation; impurity scattering; phonons; silicon; simulation; (001) SiGe; 300 K; 77 K; Si-SiGe; SiGe; acoustic-phonon scattering; anisotropic energy threshold model; carrier-carrier scattering; conduction band minima; effective mass transport; electron transport; energy bandstructure; fitted-band Monte Carlo simulator; high field electron transport characteristics; impact ionization rate; intervalley scattering suppression; ionized impurity scattering; low field mobility; mobility enhancement; multiband analytical model; nonlocal pseudopotential bandstructure; optical phonon scattering; pseudomorphically grown Si; relaxed Si1-xGex substrates; scattering rates; strained Si; Acoustic scattering; Analytical models; Electron optics; Geometrical optics; Impurities; Monte Carlo methods; Optical scattering; Phonons; Physics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
  • Conference_Location
    Austin, TX
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-2596-6
  • Type

    conf

  • DOI
    10.1109/UGIM.1995.514139
  • Filename
    514139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349894