Title :
A microwave model for high electron mobility transistors
Author :
Ahn, Hyungkeun ; El Nokali, Mahmoud A.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
A physically based model is used to predict the S and Y-parameters of the high electron mobility transistor as function of the applied gate bias and the operating frequency. The model is used to estimate the power gain and the maximum stable gain characteristics for HEMTs with different physical and structural parameters which helps in the optimization of the amplifier design
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; HEMT; S-parameters; Y-parameters; applied gate bias; high electron mobility transistors; maximum stable gain characteristics; microwave model; operating frequency; physically based model; power gain; Capacitance; Electrons; Equivalent circuits; Frequency; HEMTs; MODFETs; Predictive models; Scattering parameters; Structural engineering; Transducers;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1995., Proceedings of the Eleventh Biennial
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-2596-6
DOI :
10.1109/UGIM.1995.514141
